Newer
Older
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
---
title: Problem Set 8
---
## (11.1)
### (a)
{:.question}
Derive equation (11.28) by taking the integral and limit of equation (11.27).
### (b)
{:.question}
Show that equation (11.29) follows.
## (11.2)
{:.question}
What is the expected occupancy of a state at the conduction band edge for Ge, Si, and diamond at
room temperature (300 K)?
## (11.3)
{:.question}
Consider Si doped with 1017 As atoms/cm3.
### (a)
{:.question}
What is the equilibrium hole concentration at 300 K?
### (b)
{:.question}
How much does this move EF relative to its intrinsic value?
## (11.4)
{:.question}
Design a tristate CMOS inverter by adding a control input to a conventional inverter that can force
the output to a high impedance (disconnected) state. These are useful for allowing multiple gates to
share a single wire.