---
title: Problem Set 8
---

## (11.1)

### (a)

{:.question}
Derive equation (11.28) by taking the integral and limit of equation (11.27).

### (b)

{:.question}
Show that equation (11.29) follows.

## (11.2)

{:.question}
What is the expected occupancy of a state at the conduction band edge for Ge, Si, and diamond at
room temperature (300 K)?

## (11.3)

{:.question}
Consider Si doped with 1017 As atoms/cm3.

### (a)

{:.question}
What is the equilibrium hole concentration at 300 K?

### (b)

{:.question}
How much does this move EF relative to its intrinsic value?

## (11.4)

{:.question}
Design a tristate CMOS inverter by adding a control input to a conventional inverter that can force
the output to a high impedance (disconnected) state. These are useful for allowing multiple gates to
share a single wire.