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Erik Strand authoredErik Strand authored
title: Problem Set 8
(11.1)
(a)
{:.question} Derive equation (11.28) by taking the integral and limit of equation (11.27).
(b)
{:.question} Show that equation (11.29) follows.
(11.2)
{:.question} What is the expected occupancy of a state at the conduction band edge for Ge, Si, and diamond at room temperature (300 K)?
(11.3)
{:.question} Consider Si doped with 1017 As atoms/cm3.
(a)
{:.question} What is the equilibrium hole concentration at 300 K?
(b)
{:.question} How much does this move EF relative to its intrinsic value?
(11.4)
{:.question} Design a tristate CMOS inverter by adding a control input to a conventional inverter that can force the output to a high impedance (disconnected) state. These are useful for allowing multiple gates to share a single wire.