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  • title: Problem Set 8

    (11.1)

    (a)

    {:.question} Derive equation (11.28) by taking the integral and limit of equation (11.27).

    (b)

    {:.question} Show that equation (11.29) follows.

    (11.2)

    {:.question} What is the expected occupancy of a state at the conduction band edge for Ge, Si, and diamond at room temperature (300 K)?

    (11.3)

    {:.question} Consider Si doped with 1017 As atoms/cm3.

    (a)

    {:.question} What is the equilibrium hole concentration at 300 K?

    (b)

    {:.question} How much does this move EF relative to its intrinsic value?

    (11.4)

    {:.question} Design a tristate CMOS inverter by adding a control input to a conventional inverter that can force the output to a high impedance (disconnected) state. These are useful for allowing multiple gates to share a single wire.