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+---
+title: Problem Set 8
+---
+
+## (11.1)
+
+### (a)
+
+{:.question}
+Derive equation (11.28) by taking the integral and limit of equation (11.27).
+
+### (b)
+
+{:.question}
+Show that equation (11.29) follows.
+
+## (11.2)
+
+{:.question}
+What is the expected occupancy of a state at the conduction band edge for Ge, Si, and diamond at
+room temperature (300 K)?
+
+## (11.3)
+
+{:.question}
+Consider Si doped with 1017 As atoms/cm3.
+
+### (a)
+
+{:.question}
+What is the equilibrium hole concentration at 300 K?
+
+### (b)
+
+{:.question}
+How much does this move EF relative to its intrinsic value?
+
+## (11.4)
+
+{:.question}
+Design a tristate CMOS inverter by adding a control input to a conventional inverter that can force
+the output to a high impedance (disconnected) state. These are useful for allowing multiple gates to
+share a single wire.